!!! Overview
[{$pagename}] is an unintended and undesirable side effect in dynamic [Random Access Memory] (DRAM) in which memory cells leak their charges and interact electrically between themselves, possibly leaking or changing the contents of nearby [memory] rows that were not addressed in the original memory access. [{$pagename}] bypass of the isolation between [DRAM] [memory] cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times.!! [{$pagename}] [Exploitation]
[{$pagename}] is a complex and requires a high [Attack Effort] possible to be used as an [Attack]. Knowledge of the [devices] [hardware] [memory] and [Operating System] is required to be effective.

[{$pagename}] effect has been used in some [privilege] escalation computer security [exploits] and network-based [attacks] are also theoretically possible in a fast [network] [connection].

[{$pagename}] has been demonstrated as a [vulnerability] 
* tracked as [CVE]-2015-0565 against [Google Native Client] by [Project Zero]
* tracked as [CVE]-2016-6728 against [Android] [Operating System] 

!! More Information
There might be more information for this subject on one of the following:
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* [#1] - [Row_hammer|Wikipedia:Row_hammer|target='_blank'] - based on information obtained 2019-08-12 
* * [#2] - [CVE-2016-6728 Detail|https://nvd.nist.gov/vuln/detail/CVE-2016-6728|target='_blank'] - based on information obtained 2019-08-12